Nicolas Fressengeas @fresseng · activity timestamp 9 years ago Bandgap energy bowing parameter of strained and relaxed InGaN layers, This paper focuses on the determination of the bandgap energy bowing parameter of strained and relaxed InxGa1−xN layers. Samples are grown by metal organic vapor phase epitaxy on GaN template substrate for indium compositions in the range of 0 Reply Boost Like More actions Copy link Flag this media Block
