Both the second French National Plan for Open Science and the Higher Education and Research Ministry data road map, published in 2021, explicitly mention the use of international persistent identifiers (PIDs), like ORCID and ROR, to strengthen the researchers digital identities and extend the reach of their work. Recently, the Ministry’s data road map played a role in designing a policy for administrative simplification that relies on better data circulation. This method relies on PIDs, which are the world’s unique way to connect researchers, research outputs, institutions, and grants. The policy has two major objectives: reduce administrative burden and track research engagement and impact. A plan to effectively adopt PIDs will be designed in 2024 by representatives from French research organisations, funders, assessors, national IT and IST specialists, and international PID providers like ORCID and DataCite. In parallel the Ministry has decided to support OpenAlex, the fully open bibliographic database. The adoption of PIDs in conjunction with the support to OpenAlex, shapes the third objective : research information openness, as the Barcelona Declaration states it. However, redirecting an organisation data curation efforts from closed proprietary databases to OpenAlex hinders the quality of the former, and the rankings they enable, potential causing reputational damage to the organisation. In summary : administrative burden reduction, research productions precise tracking and information openness can be enhanced by the same move if the link to the need for open information based institutions ranking is evidenced and publicised.

Metal-oxide materials based on Earth-abundant elements such as Zn, Mg and Al are crucial for next-generation materials of optoelectronic devices. For instance, the co-incorporation of various elements in ZnO gives the ability to tune the optical and electrical properties for the targeted application by using a simple and cost-effective technique such as Ultrasonic Spray Pyrolysis (USP) using only water-based precursors solution and sodalime glass substrates. In particular, for transparent conductive oxide (TCO) films and buffer layers in solar cells, it is necessary to modulate the conductivity, for TCO, and the bandgap for optimal band alignment for buffer films. Therefore, the incorporation of Al in ZnO can increase the conductivity while the incorporation of Mg can increase the bandgap. However, the co-incorporation of Al and Mg in ZnO is particularly challenging. First, Mg can decrease the conductivity and, second, the poor miscibility of Al precursor in water and the high-density of defects degrade the electrical and optical properties of thin films deposited by USP. We have therefore developed a two-step process to address these issues. The first step consists in the optimization of the precursors solution parameters, mainly the concentrations and the pH, and the USP deposition parameters: the substrate temperature, the flow rate, the nozzle speed and the shaping air pressure. The second step of this process is based on a post-annealing treatment for which we optimized the temperature, the duration and the controlled atmosphere. The structural, optical and electrical properties of the deposited ZnMgAlO thin films, with Mg compositions up to 10% and Al compositions up to 5%, have been investigated using high-resolution X-Ray diffraction, UV-Vis. transmission spectroscopy and Hall Effect measurements, in addition to profilometry and microscopy for the surfaces analysis. The XRD results show that with using this process, the films exhibit a controlled single wurtzite phase when increasing Mg composition with a high preferential orientation along c-axis. The surface morphology of the films is uniform and homogeneous with a low roughness and an increase in the crystallite size for the optimized set of deposition and annealing parameters using the developed process, which well correlated to the XRD results. The transparency of the films increases up to almost 90%. The bandgap increases as expected when the Al and Mg compositions were increased. The electrical measurements show an increase in carrier concentration upon Al incorporation. However, this increase of free carrier concentration is balanced by the incorporation of Mg, which induces an increase in the band gap and passivation mechanism of the shallow donors. The developed process can be used to tune the optoelectronic properties of Zn(Mg,Al)O thin films for application as window and buffer layers in the next generation all-oxide solar cells based on Earth-abundant elements.

Nitride-based semiconductor materials are promising candidates for the manufacturing of very high efficiency solar cells. The Indium Gallium Nitride (InGaN) ternary alloy has a particular interest, because its energy gap can be varied in a wide spectral range just by changing the indium composition. This can lead to bandgap engineering, which would ease the design of multi-junction solar cells. Within this context, the performance of a double junction solar cell based on InGaN was simulated. In this work, we simulated globally the solar cell structure using realistic physics models and InGaN parameters obtained with experimental measurements. The modeled solar cell is composed of two p-n junctions vertically stacked having decreasing Bandgaps and connected by a specifically designed tunnel junction. This allows the conversion of different parts of the solar spectrum, thus enhancing the solar light absorption efficiency and the photocarriers transport. The device is simulated in the framework of a drift-diffusion model using the ATLAS device simulation framework from the Silvaco company. The optimization is achieved by coupling ATLAS with multivariate mathematical optimization methods based on state-of-the-art optimization algorithms. For that, we used a Python package that we developed in the SAGE software interface. The objective is to optimize the conversion efficiency of the solar cell by simultaneously optimizing several physical and geometrical parameters of the solar cell. It is an unprecedented multivariate optimization for solar cells which takes into account the correlation between these parameters. We have optimized eleven parameters simultaneously and the optimum conversion efficiency obtained is 24:4% with a short-circuit current (JSC) of 12,9 mA/cm2, an open-circuit voltage (VOC) of 2,29 V and a fill factor (FF) of 82,5 %.However, InGaN grown on available substrates have high densities of structural defects. It also has spontaneous and piezoelectric polarization fields which lead to the presence of high densities of electrostatic charges in the interfaces of the InGaN epitaxially grown layer. We thus highlight and discuss the effects of this polarization and the effects of structural defects on the photovoltaic characteristics of the solar cell.

The Indium Gallium Nitride (InGaN) alloy has the required potentialities to be a material of choice used in the next generation high efficiency solar cells. Indeed, the mere change in its Indium composition allows its absorption to cover the whole solar spectrum. The other main advantages of InGaN, in addition to its tunable bandgap, are a high absorption coefficient, a high stability and radiation tolerance. However, challenging issues remain to address: (i) the difficulty to elaborate sufficiently thick monocrystalline InGaN layers with a high Indium content; (ii) the high defects density and the spontaneous and piezoelectric polarizations; (iii) the p-doping which remains difficult to master. A review of this promising technology for solar cells is provided and present challenges and future perspectives are presented, including the use of InGaN multijunction structures and a new InGaN Schottky Based Solar Cells (SBSC) structure.